BSIM4 MOSFET Model – 小飞侠

Nonlinear Devices

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Chapter 5: Devices and Models, MOS

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BSIM4_Model (BSIM4 MOSFET Model)

Symbol

Available in ADS and RFDE

Supported via model include file in RFDE

Parameters


Name	Description	Units	Default
NMOS	model type: yes, no		yes
PMOS	model type: yes, no		no
Capmod	Capacitance model selector		2
Diomod	Diode IV model selector		1
Rdsmod	Bias-dependent S/D resistance model selector		0
Trnqsmod	Transient NQS model selector		0
Acnqsmod	AC NQS model selector		0
Mobmod	Mobility model selector		0
Rbodymod	Distributed body R model selector		0
Rgatemod	Gate R model selector		0
Permod	Pd and Ps model selector		1
Geomod	Geometry dependent parasitics model selector		0
Fnoimod	Flicker noise model selector		1
Tnoimod	Thermal noise model selector		0
Igcmod	Gate-to-channel Ig model selector		0
Igbmod	Gate-to-body Ig model selector		0
Tempmod	Temperature model selector		0
Paramchk	Model parameter checking selector		1
Binunit	Bin unit selector		1
Version	Parameter for model version		4.40
Toxe	Electrical gate oxide thickness in meters		30.0e-10
Toxp	Physical gate oxide thickness in meters		Toxe
Toxm	Gate oxide thickness at which parameters are extracted		Toxe
Toxref	Target Tox value		30.0e-10
Dtox	Defined as (Toxe – Toxp)		0.0
Epsrox	Dielectric constant of the gate oxide relative to vacuum		3.9
Cdsc	Drain/Source and channel coupling capacitance	F/(V*m ² )	2.4e-4
Cdscb	Body-bias dependence of Cdsc	F/(V*m ² )	0.0
Cdscd	Drain-bias dependence of Cdsc	F/(V*m ² )	0.0
Cit	Interface state capacitance	F/(V*m ² )	0.0
Nfactor	Subthreshold swing coefficient		1.0
Xj	Junction depth	m	1.5e-7
Vsat	Saturation velocity at Tnom	m/s	8.0e4
At	Temperature coefficient of Vsat	m/s	3.3e4
A0	Non-uniform depletion width effect coefficient		1.0
Ags	Gate bias coefficient of Abulk	V ^-1	0.0
A1	First non-saturation effect coefficient	V ^-1	0.0
A2	Second non-saturation effect coefficient		1.0
Keta	Body-bias coefficient of non-uniform depletion width effect	V ^-1	-0.047
Nsub	Substrate doping concentration	cm ^-3	6.0e16
Ndep	Channel doping concentration at the depletion edge	cm ^-3	1.7e17
Nsd	S/D doping concentration	cm ^-3	1.0e20
Phin	Adjusting parameter for surface potential due to non-uniform vertical doping	V	0.0
Ngate	Poly-gate doping concentration	cm ^-3	0.0
Gamma1	Vth body coefficient	V ^1/2	calculated
Gamma2	Vth body coefficient	V ^1/2	calculated
Vbx	Vth transition body voltage	V	calculated
Vbm	Maximum body voltage	V	-3.0
Xt	Doping depth	m	1.55e-7
K1	Bulk effect coefficient 1	V ^1/2	0.5
Kt1	Temperature coefficient of Vth	V	-0.11
Kt1l	Temperature coefficient of Vth	V*m	0.0
Kt2	Body coefficient of Kt1
K2	Bulk effect coefficient 2		0.0
K3	Narrow width effect coefficient		80.0
K3b	Body effect coefficient of K3	V ^-1	0.0
W0	Narrow width effect parameter	m	2.5e-6
Dvtp0	First parameter for Vth shift due to pocket	m	0.0
Dvtp1	Second parameter for Vth shift due to pocket	V ^-1	0.0
Lpe0	Equivalent length of pocket region at zero bias	m	1.74e-7
Lpeb	Equivalent length of pocket region accounting for body bias	m	0.0
Dvt0	Short channel effect coefficient 0		2.2
Dvt1	Short channel effect coefficient 1		0.53
Dvt2	Short channel effect coefficient 2	V ^-1	-0.032
Dvt0w	Narrow Width coefficient 0		0.0
Dvt1w	Narrow Width effect coefficient 1	m ^-1	5.3e6
Dvt2w	Narrow Width effect coefficient 2	V ^-1	-0.032
Drout	DIBL coefficient of output resistance		0.56
Dsub	DIBL coefficient in the subthreshold region		fixed by Drout
Vth0 (Vtho)	Threshold voltage	V	0.7 (NMOS) -0.7 (PMOS)
Ua	Linear gate dependence of mobility		1.0e-15 (Mobmod 2) 1.0e-9 (Mobmod 0, 1)
Ua1	Temperature coefficient of Ua	m/V	1.0e-9
Ub	Quadratic gate dependence of mobility	(m/V ² )	1.0e-19
Ub1	Temperature coefficient of Ub	(m/V ² )	1.0e-18
Uc	Body-bias dependence of mobility	V ^-1	-0.0465 (Mobmod 1) -0.0465e-9 (Mobmod 0, 2)
Uc1	Temperature coefficient of Uc	V ^-1	-0.056 (Mobmod 1) -0.056e-9 (Mobmod 0, 2)
U0	Low-field mobility at Tnom	m ² /(V*s)	0.0677 (NMOS) -0.025 (PMOS)
Eu	Mobility exponent		1.67 (NMOS) 1.0 (PMOS)
Ute	Temperature coefficient of mobility		-1.5
Voff	Threshold voltage offset	V	-0.08
Minv	Fitting parameter for moderate inversion in Vgsteff		0.0
Voffl	Length dependence parameter for Vth offset	V*m	0.0
Tnom	Parameter measurement temperature	° C	25
Trise	temperature rise above ambient	° C	0
Cgso	Gate-source overlap capacitance per width	F/m	calculated
Cgdo	Gate-drain overlap capacitance per width	F/m	calculated
Cgbo	Gate-bulk overlap capacitance per length	F/m	0.0
Xpart	Channel charge partitioning		0.0
Delta	Effective Vds parameter	V	0.01
Rsh	Source-drain sheet resistance	ohms/sq	0.0
Rdsw	Source-drain resistance per width	ohms*um	200.0
Rdswmin	Source-drain resistance per width at high Vg	ohms*um	0.0
Rsw	Source resistance per width	ohms*um	100.0
Rdw	Drain resistance per width	ohms*um	100.0
Rdwmin	Drain resistance per width at high Vg	ohms*um	0.0
Rswmin	Source resistance per width at high Vg	ohms*um	0.0
Prwg	Gate-bias effect on parasitic resistance	V ^-1	1.0
Prwb	Body-effect on parasitic resistance	V ^-1/2	0.0
Prt	Temperature coefficient of parasitic resistance	ohms*um	0.0
Eta0	Subthreshold region DIBL coefficient		0.08
Etab	Subthreshold region DIBL coefficient	V ^-1	-0.07
Pclm	Channel length modulation coefficient		1.3
Pdiblc1	Drain-induced barrier lowering coefficient		0.39
Pdiblc2	Drain-induced barrier lowering coefficient		0.0086
Pdiblcb	Body-effect on drain-induced barrier lowering	V ^-1	0.0
Fprout	Rout degradation coefficient for pocket devices	V/m ^1/2	0.0
Pdits	Coefficient for drain-induced Vth shifts	V ^-1	0.0
Pditsl	Length dependence of drain-induced Vth shifts	m ^-1	0.0
Pditsd	Vds dependence of drain-induced Vth shifts	V ^-1	0.0
Pscbe1	Substrate current body-effect coefficient	V/m	4.24e8
Pscbe2	Substrate current body-effect coefficient	m/V	1.0e-5
Pvag	Gate dependence of output resistance parameter		0.0
Jss	Bottom source junction reverse saturation current density	A/m ²	1.0e-4
Jsws	Isolation edge sidewall source junction reverse saturation current density	A/m	0.0
Jswgs	Gate edge source junction reverse saturation current density	A/m	0.0
Pbs	Source junction built-in potential	V	1.0
Njs	Source junction emission coefficient		1.0
Xtis	Source junction current temperature exponent		3.0
Mjs	Source bottom junction capacitance grading coefficient		0.5
Pbsws	Source sidewall junction capacitance built-in potential	V	1.0
Mjsws	Source sidewall junction capacitance grading coefficient		0.33
Pbswgs	Source gate side sidewall junction capacitance built-in potential	V	Pbsws
Mjswgs	Source gate side sidewall junction capacitance grading coefficient		Mjsws
Cjs	Source bottom junction capacitance per unit area	F/m ²	5.0e-4
Cjsws	Source sidewall junction capacitance per unit periphery	F/m	5.0e-10
Cjswgs	Source gate side sidewall junction capacitance per unit width	F/m	Cjsws
Jsd	Bottom drain junction reverse saturation current density	A/m ²	Jss
Jswd	Isolation edge sidewall drain junction reverse saturation current density	A/m	Jsws
Jswgd	Gate edge drain junction reverse saturation current density		Jswgs
Pbd	Drain junction built-in potential	V	Pbs
Njd	Drain junction emission coefficient		Njs
Xtid	Drain junction current temperature exponent		Xtis
Mjd	Drain bottom junction capacitance grading coefficient		Mjs
Pbswd	Drain sidewall junction capacitance built-in potential	V	Pbsws
Mjswd	Drain sidewall junction capacitance grading coefficient		Mjsws
Pbswgd	Drain gate side sidewall junction capacitance built-in potential	V	Pbswgs
Mjswgd	Drain gate side sidewall junction capacitance grading coefficient		Mjswgs
Cjd	Drain bottom junction capacitance per unit area	F/m ²	Cjs
Cjswd	Drain sidewall junction capacitance per unit periphery	F/m	Cjsws
Cjswgd	Drain gate side sidewall junction capacitance per unit width	F/m	Cjswg
Vfbcv	Flat Band Voltage parameter for capmod	V	-1.0
Vfb	Flat Band Voltage	V	-1.0
Tpb	Temperature coefficient of pb	V/K	0.0
Tcj	Temperature coefficient of cj	K ^-1	0.0
Tpbsw	Temperature coefficient of pbsw	V/K	0.0
Tcjsw	Temperature coefficient of cjsw	K ^-1	0.0
Tpbswg	Temperature coefficient of pbswg	V/K	0.0
Tcjswg	Temperature coefficient of cjswg	K ^-1	0.0
Acde	Exponential coefficient for finite charge thickness	m/V	1.0
Moin	Coefficient for gate-bias dependent surface potential		15.0
Noff	C-V turn-on/off parameter		1.0
Voffcv	C-V lateral-shift parameter	V	0.0
Dmcg	Distance of Mid-Contact to Gate edge	m	0.0
Dmci	Distance of Mid-Contact to Isolation	m	Dmcg
Dmdg	Distance of Mid-Diffusion to Gate edge	m	0.0
Dmcgt	Distance of Mid-Contact to Gate edge in Test structures	m	0.0
Xgw	Distance from gate contact center to device edge	m	0.0
Xgl	Variation in Ldrawn	m	0.0
Rshg	Gate sheet resistance	ohms/sq	0.1
Ngcon	Number of gate contacts		1.0
Xrcrg1	First fitting parameter the bias-dependent Rg		12.0
Xrcrg2	Second fitting parameter the bias-dependent Rg		1.0
Xw	W offset for channel width due to mask/etch effect	m
Xl	L offset for channel width due to mask/etch effect	m
Lambda	Velocity overshoot parameter	m^3/(V*s)	0.0
Vtl	Thermal velocity	m/s	2.0e5
Lc	Velocity back scattering parameter	m	5.0e-9
Xn	Velocity back scattering coefficient		3.0
Vfbsdoff	S/D flatband voltage offset	V	0.0
Lintnoi	Lint offset for noise calculation	m	0.0
Lint	Length reduction parameter	m	0.0
Ll	Length reduction parameter	m	0.0
Llc	Length reduction parameter for CV	m	0.0
Lln	Length reduction parameter		0.0
Lw	Length reduction parameter	m	0.0
Lwc	Length reduction parameter for CV	m	Lw
Lwn	Length reduction parameter		1.0
Lwl	Length reduction parameter	m	0.0
Lwlc	Length reduction parameter for CV	m	Lwl
Lmin	Minimum length for the model	m	0.0
Lmax	Maximum length for the model	m	1.0
Wr	Width dependence of rds		1.0
Wint	Width reduction parameter	m	0.0
Dwg	Width reduction parameter	m/V	0.0
Dwb	Width reduction parameter	m/V ^1/2	0.0
Wl	Width reduction parameter	m	0.0
Wlc	Width reduction parameter for CV	m	Wl
Wln	Width reduction parameter		1.0
Ww	Width reduction parameter	m	0.0
Wwc	Width reduction parameter for CV	m	Ww
Wwn	Width reduction parameter		1.0
Wwl	Width reduction parameter	m	0.0
Wwlc	Width reduction parameter for CV	m	Wwl
Wmin	Minimum width for the model	m	0.0
Wmax	Maximum width for the model	m	1.0
B0	A bulk narrow width parameter	m	0.0
B1	A bulk narrow width parameter	m	0.0
Cgsl	New C-V model parameter	F/m	0.0
Cgdl	New C-V model parameter	F/m	0.0
Ckappas	S/G overlap C-V parameter	V	0.6
Ckappad	D/G overlap C-V parameter	V	Ckappas
Cf	Fringe capacitance parameter	F/m	calculated
Clc	Vdsat parameter for C-V model	m	1.0e-7
Cle	Vdsat parameter for C-V model		0.6
Dwc	Delta W for C-V model	m	Wint
Dlc	Delta L for C-V model	m	Lint
Dlcig	Delta L for Ig model	m	Lint
Dwj	Delta W for S/D junctions		Dwc
Alpha0	substrate current model parameter	A*m/V	0.0
Alpha1	substrate current model parameter	A/V	0.0
Beta0	substrate current model parameter	V	30.0
Agidl	Pre-exponential constant for GIDL	Ohm ^-1	0.0
Bgidl	Exponential constant for GIDL	V/m	2.3e9
Cgidl	Parameter for body-bias dependence of GIDL	V ³	0.5
Egidl	Fitting parameter for bandbending	V	0.8
Aigc	Parameter for Igc		0.43 (NMOS) 0.31 (PMOS)
Bigc	Parameter for Igc		0.054 (NMOS) 0.024 (PMOS)
Cigc	Parameter for Igc	V ^-1	0.075 (NMOS) 0.03 (PMOS)
Aigsd	Parameter for Igs,d		0.043 (NMOS) 0.31 (PMOS)
Bigsd	Parameter for Igs,d		0.054 (NMOS) 0.024 (PMOS)
Cigsd	Parameter for Igs,d	V ^-1	0.075 (NMOS) 0.03 (PMOS)
Aigbacc	Parameter for Igb		0.43
Bigbacc	Parameter for Igb		0.054
Cigbacc	Parameter for Igb	V ^-1	0.075
Aigbinv	Parameter for Igb		0.35
Bigbinv	Parameter for Igb		0.03
Cigbinv	Parameter for Igb	V ^-1	0.006
Nigc	Parameter for Igc slope		1.0
Nigbinv	Parameter for Igbinv slope		3.0
Nigbacc	Parameter for Igbacc slope		1.0
Ntox	Exponent for Tox ratio		1.0
Eigbinv	Parameter for the Si bandgap for Igbinv	V	1.1
Pigcd	Parameter for Igc partition		1.0
Poxedge	Factor for the gate edge Tox		1.0
Ijthdfwd	Forward drain diode forward limiting current	A	Ijthsfwd
Ijthsfwd	Forward source diode forward limiting current	A	0.1
Ijthdrev	Reverse drain diode forward limiting current	A	Ijthsrev
Ijthsrev	Reverse source diode forward limiting current	A	0.1
Imelt	(similar to Ijth*; refer to Note 12 on Imelt, Ijth, Ijthdfwd, Ijthsfwd, Ijthdrev, Ijthsrev)	A	Ijthsfwd
Xjbvd	Fitting parameter for drain diode breakdown current		Xjbvs
Xjbvs	Fitting parameter for source diode breakdown current		1.0
Bvd	Drain diode breakdown voltage	V	Bvs
Bvs	Source diode breakdown voltage	V	10.0
Gbmin	Minimum body conductance	ohm ^-1	1.0e-12
Jtss	Source bottom trap-assisted saturation current density		0.0
Jtsd	Drain bottom trap-assisted saturation current density		0.0
Jtssws	Source STI sidewall trap-assisted saturation current density		0.0
Jtsswd	Drain STI sidewall trap-assisted saturation current density		0.0
Jtsswgs	Source gate-edge sidewall trap-assisted saturation current density		0.0
Jtsswgd	Drain gate-edge sidewall trap-assisted saturation current density		0.0
Njts	Non-ideality factor for bottom junction		20.0
Njtssw	Non-ideality factor for STI sidewall junction		20.0
Njtsswg	Non-ideality factor for gate-edge sidewall junction		20.0
Xtss	Power dependence of Jtss on temperature		0.02
Xtsd	Power dependence of Jtsd on temperature		0.02
Xtssws	Power dependence of Jtssws on temperature		0.02
Xtsswd	Power dependence of Jtsswd on temperature		0.02
Xtsswgs	Power dependence of Jtsswgs on temperature		0.02
Xtsswgd	Power dependence of Jtsswgd on temperature		0.02
Tnjts	Temperature coefficient for Njts		0.0
Tnjtssw	Temperature coefficient for Njtssw		0.0
Tnjtsswg	Temperature coefficient for Njtsswg		0.0
Vtss	Source bottom trap-assisted voltage dependent parameter		10.0
Vtsd	Drain bottom trap-assisted voltage dependent parameter		10.0
Vtssws	Source STI sidewall trap-assisted voltage dependent parameter		10.0
Vtsswd	Drain STI sidewall trap-assisted voltage dependent parameter		10.0
Vtsswgs	Source gate-edge sidewall trap-assisted voltage dependent parameter		10.0
Vtsswgd	Drain gate-edge sidewall trap-assisted voltage dependent parameter		10.0
Rbdb	Resistance between bNode and dbNode	ohms	50.0
Rbpb	Resistance between bNodePrime and bNode	ohms	50.0
Rbsb	Resistance between bNode and sbNode	ohms	50.0
Rbps	Resistance between bNodePrime and sbNode	ohms	50.0
Rbpd	Resistance between bNodePrime and bNode	ohms	50.0
Lcdsc	Length dependence of cdsc		0.0
Lcdscb	Length dependence of cdscb		0.0
Lcdscd	Length dependence of cdscd		0.0
Lcit	Length dependence of cit		0.0
Lnfactor	Length dependence of nfactor		0.0
Lxj	Length dependence of xj		0.0
Lvsat	Length dependence of vsat		0.0
Lat	Length dependence of at		0.0
La0	Length dependence of a0		0.0
Lags	Length dependence of ags		0.0
La1	Length dependence of a1		0.0
La2	Length dependence of a2		0.0
Lketa	Length dependence of keta		0.0
Lnsub	Length dependence of nsub		0.0
Lndep	Length dependence of ndep		0.0
Lnsd	Length dependence of nsd		0.0
Lphin	Length dependence of phin		0.0
Lngate	Length dependence of ngate		0.0
Lgamma1	Length dependence of gamma1		0.0
Lgamma2	Length dependence of gamma2		0.0
Lvbx	Length dependence of vbx		0.0
Lvbm	Length dependence of vbm		0.0
Lxt	Length dependence of xt		0.0
Lk1	Length dependence of k1		0.0
Lkt1	Length dependence of kt1		0.0
Lkt1l	Length dependence of kt1l		0.0
Lkt2	Length dependence of kt2		0.0
Lk2	Length dependence of k2		0.0
Lk3	Length dependence of k3		0.0
Lk3b	Length dependence of k3b		0.0
Lw0	Length dependence of w0		0.0
Ldvtp0	Length dependence of dvtp0		0.0
Ldvtp1	Length dependence of dvtp1		0.0
Llpe0	Length dependence of lpe0		0.0
Llpeb	Length dependence of lpeb		0.0
Ldvt0	Length dependence of dvt0		0.0
Ldvt1	Length dependence of dvt1		0.0
Ldvt2	Length dependence of dvt2		0.0
Ldvt0w	Length dependence of dvt0w		0.0
Ldvt1w	Length dependence of dvt1w		0.0
Ldvt2w	Length dependence of dvt2w		0.0
Ldrout	Length dependence of drout		0.0
Ldsub	Length dependence of dsub		0.0
Lvth0 (Lvtho)	Length dependence of vto		0.0
Lua	Length dependence of ua		0.0
Lua1	Length dependence of ua1		0.0
Lub	Length dependence of ub		0.0
Lub1	Length dependence of ub1		0.0
Luc	Length dependence of uc		0.0
Luc1	Length dependence of uc1		0.0
Lu0	Length dependence of u0		0.0
Lute	Length dependence of ute		0.0
Lvoff	Length dependence of voff		0.0
Lminv	Length dependence of minv		0.0
Ldelta	Length dependence of delta		0.0
Lrdsw	Length dependence of rdsw		0.0
Lrsw	Length dependence of rsw		0.0
Lrdw	Length dependence of rdw		0.0
Lprwg	Length dependence of prwg		0.0
Lprwb	Length dependence of prwb		0.0
Lprt	Length dependence of prt		0.0
Leta0	Length dependence of eta0		0.0
Letab	Length dependence of etab		0.0
Lpclm	Length dependence of pclm		0.0
Lpdiblc1	Length dependence of pdiblc1		0.0
Lpdiblc2	Length dependence of pdiblc2		0.0
Lpdiblcb	Length dependence of pdiblcb		0.0
Lfprout	Length dependence of pdiblcb		0.0
Lpdits	Length dependence of pdits		0.0
Lpditsd	Length dependence of pditsd		0.0
Lpscbe1	Length dependence of pscbe1		0.0
Lpscbe2	Length dependence of pscbe2		0.0
Lpvag	Length dependence of pvag		0.0
Lwr	Length dependence of wr		0.0
Ldwg	Length dependence of dwg		0.0
Ldwb	Length dependence of dwb		0.0
Lb0	Length dependence of b0		0.0
Lb1	Length dependence of b1		0.0
Lcgsl	Length dependence of cgsl		0.0
Lcgdl	Length dependence of cgdl		0.0
Lckappas	Length dependence of ckappas		0.0
Lckappad	Length dependence of ckappad		0.0
Lcf	Length dependence of cf		0.0
Lclc	Length dependence of clc		0.0
Lcle	Length dependence of cle		0.0
Lalpha0	Length dependence of alpha0		0.0
Lalpha1	Length dependence of alpha1		0.0
Lbeta0	Length dependence of beta0		0.0
Lagidl	Length dependence of agidl		0.0
Lbgidl	Length dependence of bgidl		0.0
Lcgidl	Length dependence of cgidl		0.0
Legidl	Length dependence of egidl		0.0
Laigc	Length dependence of aigc		0.0
Lbigc	Length dependence of bigc		0.0
Lcigc	Length dependence of cigc		0.0
Laigsd	Length dependence of aigsd		0.0
Lbigsd	Length dependence of bigsd		0.0
Lcigsd	Length dependence of cigsd		0.0
Laigbacc	Length dependence of aigbacc		0.0
Lbigbacc	Length dependence of bigbacc		0.0
Lcigbacc	Length dependence of cigbacc		0.0
Laigbinv	Length dependence of aigbinv		0.0
Lbigbinv	Length dependence of bigbinv		0.0
Lcigbinv	Length dependence of cigbinv		0.0
Lnigc	Length dependence of nigc		0.0
Lnigbinv	Length dependence of nigbinv		0.0
Lnigbacc	Length dependence of nigbacc		0.0
Lntox	Length dependence of ntox		0.0
Leigbinv	Length dependence for eigbinv		0.0
Lpigcd	Length dependence for pigcd		0.0
Lpoxedge	Length dependence for poxedge		0.0
Lvfbcv	Length dependence of vfbcv		0.0
Lvfb	Length dependence of vfb		0.0
Lacde	Length dependence of acde		0.0
Lmoin	Length dependence of moin		0.0
Lnoff	Length dependence of noff		0.0
Lvoffcv	Length dependence of voffcv		0.0
Lxrcrg1	Length dependence of xrcrg1		0.0
Lxrcrg2	Length dependence of xrcrg2		0.0
Llambda	Length dependence of Lambda		0.0
Lvtl	Length dependence of Vtl		0.0
Lxn	Length dependence of Xn		0.0
Leu	Length dependence of eu		0.0
Lvfbsdoff	Length dependence of Vfbsdoff		0.0
Wcdsc	Width dependence of cdsc		0.0
Wcdscb	Width dependence of cdscb		0.0
Wcdscd	Width dependence of cdscd		0.0
Wcit	Width dependence of cit		0.0
Wnfactor	Width dependence of nfactor		0.0
Wxj	Width dependence of xj		0.0
Wvsat	Width dependence of vsat		0.0
Wat	Width dependence of at		0.0
Wa0	Width dependence of a0		0.0
Wags	Width dependence of ags		0.0
Wa1	Width dependence of a1		0.0
Wa2	Width dependence of a2		0.0
Wketa	Width dependence of keta		0.0
Wnsub	Width dependence of nsub		0.0
Wndep	Width dependence of ndep		0.0
Wnsd	Width dependence of nsd		0.0
Wphin	Width dependence of phin		0.0
Wngate	Width dependence of ngate		0.0
Wgamma1	Width dependence of gamma1		0.0
Wgamma2	Width dependence of gamma2		0.0
Wvbx	Width dependence of vbx		0.0
Wvbm	Width dependence of vbm		0.0
Wxt	Width dependence of xt		0.0
Wk1	Width dependence of k1		0.0
Wkt1	Width dependence of kt1		0.0
Wkt1l	Width dependence of kt1l		0.0
Wkt2	Width dependence of kt2		0.0
Wk2	Width dependence of k2		0.0
Wk3	Width dependence of k3		0.0
Wk3b	Width dependence of k3b		0.0
Ww0	Width dependence of w0		0.0
Wdvtp0	Width dependence of dvtp0		0.0
Wdvtp1	Width dependence of dvtp1		0.0
Wlpe0	Width dependence of lpe0		0.0
Wlpeb	Width dependence of lpeb		0.0
Wdvt0	Width dependence of dvt0		0.0
Wdvt1	Width dependence of dvt1		0.0
Wdvt2	Width dependence of dvt2		0.0
Wdvt0w	Width dependence of dvt0w		0.0
Wdvt1w	Width dependence of dvt1w		0.0
Wdvt2w	Width dependence of dvt2w		0.0
Wdrout	Width dependence of drout		0.0
Wdsub	Width dependence of dsub		0.0
Wvth0 (Wvtho)	Width dependence of vto		0.0
Wua	Width dependence of ua		0.0
Wua1	Width dependence of ua1		0.0
Wub	Width dependence of ub		0.0
Wub1	Width dependence of ub1		0.0
Wuc	Width dependence of uc		0.0
Wuc1	Width dependence of uc1		0.0
Wu0	Width dependence of u0		0.0
Wute	Width dependence of ute		0.0
Wvoff	Width dependence of voff		0.0
Wminv	Width dependence of minv		0.0
Wdelta	Width dependence of delta		0.0
Wrdsw	Width dependence of rdsw		0.0
Wrsw	Width dependence of rsw		0.0
Wrdw	Width dependence of rdw		0.0
Wprwg	Width dependence of prwg		0.0
Wprwb	Width dependence of prwb		0.0
Wprt	Width dependence of prt		0.0
Weta0	Width dependence of eta0		0.0
Wetab	Width dependence of etab		0.0
Wpclm	Width dependence of pclm		0.0
Wpdiblc1	Width dependence of pdiblc1		0.0
Wpdiblc2	Width dependence of pdiblc2		0.0
Wpdiblcb	Width dependence of pdiblcb		0.0
Wfprout	Width dependence of pdiblcb		0.0
Wpdits	Width dependence of pdits		0.0
Wpditsd	Width dependence of pditsd		0.0
Wpscbe1	Width dependence of pscbe1		0.0
Wpscbe2	Width dependence of pscbe2		0.0
Wpvag	Width dependence of pvag		0.0
Wwr	Width dependence of wr		0.0
Wdwg	Width dependence of dwg		0.0
Wdwb	Width dependence of dwb		0.0
Wb0	Width dependence of b0		0.0
Wb1	Width dependence of b1		0.0
Wcgsl	Width dependence of cgsl		0.0
Wcgdl	Width dependence of cgdl		0.0
Wckappas	Width dependence of ckappas		0.0
Wckappad	Width dependence of ckappad		0.0
Wcf	Width dependence of cf		0.0
Wclc	Width dependence of clc		0.0
Wcle	Width dependence of cle		0.0
Walpha0	Width dependence of alpha0		0.0
Walpha1	Width dependence of alpha1		0.0
Wbeta0	Width dependence of beta0		0.0
Wagidl	Width dependence of agidl		0.0
Wbgidl	Width dependence of bgidl		0.0
Wcgidl	Width dependence of cgidl		0.0
Wegidl	Width dependence of egidl		0.0
Waigc	Width dependence of aigc		0.0
Wbigc	Width dependence of bigc		0.0
Wcigc	Width dependence of cigc		0.0
Waigsd	Width dependence of aigsd		0.0
Wbigsd	Width dependence of bigsd		0.0
Wcigsd	Width dependence of cigsd		0.0
Waigbacc	Width dependence of aigbacc		0.0
Wbigbacc	Width dependence of bigbacc		0.0
Wcigbacc	Width dependence of cigbacc		0.0
Waigbinv	Width dependence of aigbinv		0.0
Wbigbinv	Width dependence of bigbinv		0.0
Wcigbinv	Width dependence of cigbinv		0.0
Wnigc	Width dependence of nigc		0.0
Wnigbinv	Width dependence of nigbinv		0.0
Wnigbacc	Width dependence of nigbacc		0.0
Wntox	Width dependence of ntox		0.0
Weigbinv	Width dependence for eigbinv		0.0
Wpigcd	Width dependence for pigcd		0.0
Wpoxedge	Width dependence for poxedge		0.0
Wvfbcv	Width dependence of vfbcv		0.0
Wvfb	Width dependence of vfb		0.0
Wacde	Width dependence of acde		0.0
Wmoin	Width dependence of moin		0.0
Wnoff	Width dependence of noff		0.0
Wvoffcv	Width dependence of voffcv		0.0
Wxrcrg1	Width dependence of xrcrg1		0.0
Wxrcrg2	Width dependence of xrcrg2		0.0
Wlambda	Width dependence of Lambda		0.0
Wvtl	Width dependence of Vtl		0.0
Wxn	Width dependence of Xn		0.0
Weu	Width dependence of eu		0.0
Wvfbsdoff	Width dependence of Vfbsdoff		0.0
Pcdsc	Cross-term dependence of cdsc		0.0
Pcdscb	Cross-term dependence of cdscb		0.0
Pcdscd	Cross-term dependence of cdscd		0.0
Pcit	Cross-term dependence of cit		0.0
Pnfactor	Cross-term dependence of nfactor		0.0
Pxj	Cross-term dependence of xj		0.0
Pvsat	Cross-term dependence of vsat		0.0
Pat	Cross-term dependence of at		0.0
Pa0	Cross-term dependence of a0		0.0
Pags	Cross-term dependence of ags		0.0
Pa1	Cross-term dependence of a1		0.0
Pa2	Cross-term dependence of a2		0.0
Pketa	Cross-term dependence of keta		0.0
Pnsub	Cross-term dependence of nsub		0.0
Pndep	Cross-term dependence of ndep		0.0
Pnsd	Cross-term dependence of nsd		0.0
Pphin	Cross-term dependence of phin		0.0
Pngate	Cross-term dependence of ngate		0.0
Pgamma1	Cross-term dependence of gamma1		0.0
Pgamma2	Cross-term dependence of gamma2		0.0
Pvbx	Cross-term dependence of vbx		0.0
Pvbm	Cross-term dependence of vbm		0.0
Pxt	Cross-term dependence of xt		0.0
Pk1	Cross-term dependence of k1		0.0
Pkt1	Cross-term dependence of kt1		0.0
Pkt1l	Cross-term dependence of kt1l		0.0
Pkt2	Cross-term dependence of kt2		0.0
Pk2	Cross-term dependence of k2		0.0
Pk3	Cross-term dependence of k3		0.0
Pk3b	Cross-term dependence of k3b		0.0
Pw0	Cross-term dependence of w0		0.0
Pdvtp0	Cross-term dependence of dvtp0		0.0
Pdvtp1	Cross-term dependence of dvtp1		0.0
Plpe0	Cross-term dependence of lpe0		0.0
Plpeb	Cross-term dependence of lpeb		0.0
Pdvt0	Cross-term dependence of dvt0		0.0
Pdvt1	Cross-term dependence of dvt1		0.0
Pdvt2	Cross-term dependence of dvt2		0.0
Pdvt0w	Cross-term dependence of dvt0w		0.0
Pdvt1w	Cross-term dependence of dvt1w		0.0
Pdvt2w	Cross-term dependence of dvt2w		0.0
Pdrout	Cross-term dependence of drout		0.0
Pdsub	Cross-term dependence of dsub		0.0
Pvth0 (Pvtho)	Cross-term dependence of vto		0.0
Pua	Cross-term dependence of ua		0.0
Pua1	Cross-term dependence of ua1		0.0
Pub	Cross-term dependence of ub		0.0
Pub1	Cross-term dependence of ub1		0.0
Puc	Cross-term dependence of uc		0.0
Puc1	Cross-term dependence of uc1		0.0
Pu0	Cross-term dependence of u0		0.0
Pute	Cross-term dependence of ute		0.0
Pvoff	Cross-term dependence of voff		0.0
Pminv	Cross-term dependence of minv		0.0
Pdelta	Cross-term dependence of delta		0.0
Prdsw	Cross-term dependence of rdsw		0.0
Prsw	Cross-term dependence of rsw		0.0
Prdw	Cross-term dependence of rdw		0.0
Pprwg	Cross-term dependence of prwg		0.0
Pprwb	Cross-term dependence of prwb		0.0
Pprt	Cross-term dependence of prt		0.0
Peta0	Cross-term dependence of eta0		0.0
Petab	Cross-term dependence of etab		0.0
Ppclm	Cross-term dependence of pclm		0.0
Ppdiblc1	Cross-term dependence of pdiblc1		0.0
Ppdiblc2	Cross-term dependence of pdiblc2		0.0
Ppdiblcb	Cross-term dependence of pdiblcb		0.0
Pfprout	Cross-term dependence of pdiblcb		0.0
Ppdits	Cross-term dependence of pdits		0.0
Ppditsd	Cross-term dependence of pditsd		0.0
Ppscbe1	Cross-term dependence of pscbe1		0.0
Ppscbe2	Cross-term dependence of pscbe2		0.0
Ppvag	Cross-term dependence of pvag		0.0
Pwr	Cross-term dependence of wr		0.0
Pdwg	Cross-term dependence of dwg		0.0
Pdwb	Cross-term dependence of dwb		0.0
Pb0	Cross-term dependence of b0		0.0
Pb1	Cross-term dependence of b1		0.0
Pcgsl	Cross-term dependence of cgsl		0.0
Pcgdl	Cross-term dependence of cgdl		0.0
Pckappas	Cross-term dependence of ckappas		0.0
Pckappad	Cross-term dependence of ckappad		0.0
Pcf	Cross-term dependence of cf		0.0
Pclc	Cross-term dependence of clc		0.0
Pcle	Cross-term dependence of cle		0.0
Palpha0	Cross-term dependence of alpha0		0.0
Palpha1	Cross-term dependence of alpha1		0.0
Pbeta0	Cross-term dependence of beta0		0.0
Pagidl	Cross-term dependence of agidl		0.0
Pbgidl	Cross-term dependence of bgidl		0.0
Pcgidl	Cross-term dependence of cgidl		0.0
Pegidl	Cross-term dependence of egidl		0.0
Paigc	Cross-term dependence of aigc		0.0
Pbigc	Cross-term dependence of bigc		0.0
Pcigc	Cross-term dependence of cigc		0.0
Paigsd	Cross-term dependence of aigsd		0.0
Pbigsd	Cross-term dependence of bigsd		0.0
Pcigsd	Cross-term dependence of cigsd		0.0
Paigbacc	Cross-term dependence of aigbacc		0.0
Pbigbacc	Cross-term dependence of bigbacc		0.0
Pcigbacc	Cross-term dependence of cigbacc		0.0
Paigbinv	Cross-term dependence of aigbinv		0.0
Pbigbinv	Cross-term dependence of bigbinv		0.0
Pcigbinv	Cross-term dependence of cigbinv		0.0
Pnigc	Cross-term dependence of nigc		0.0
Pnigbinv	Cross-term dependence of nigbinv		0.0
Pnigbacc	Cross-term dependence of nigbacc		0.0
Pntox	Cross-term dependence of ntox		0.0
Peigbinv	Cross-term dependence for eigbinv		0.0
Ppigcd	Cross-term dependence for pigcd		0.0
Ppoxedge	Cross-term dependence for poxedge		0.0
Pvfbcv	Cross-term dependence of vfbcv		0.0
Pvfb	Cross-term dependence of vfb		0.0
Pacde	Cross-term dependence of acde		0.0
Pmoin	Cross-term dependence of moin		0.0
Pnoff	Cross-term dependence of noff		0.0
Pvoffcv	Cross-term dependence of voffcv		0.0
Pxrcrg1	Cross-term dependence of xrcrg1		0.0
Pxrcrg2	Cross-term dependence of xrcrg2		0.0
Plambda	Cross-term dependence of Lambda		0.0
Pvtl	Cross-term dependence of Vtl		0.0
Pxn	Cross-term dependence of Xn		0.0
Peu	Cross-term dependence of eu		0.0
Pvfbsdoff	Cross-term dependence of Vfbsdoff		0.0
Saref	Reference distance between OD edge to poly of one side	m	1.0e-6
Sbref	Reference distance between OD edge to poly of the other side	m	1.0e-6
Wlod	Width parameter for stress effect	m	0.0
Ku0	Mobility degradation/enhancement coefficient for LOD	m	0.0
Kvsat	Saturation velocity degradation/enhancement parameter for LOD	m	0.0
Kvth0	Threshold shift parameter for LOD	V*m	0.0
Tku0	Temperature coefficient of Ku0		0.0
Llodku0	Length parameter for U0 LOD effect		0.0
Wlodku0	Width parameter for U0 LOD effect		0.0
Llodvth	Length parameter for Vth LOD effect		0.0
Wlodvth	Width parameter for Vth LOD effect		0.0
Lku0	Length dependence of Ku0		0.0
Wku0	Width dependence of Ku0		0.0
Pku0	Cross-term dependence of Ku0		0.0
Lkvth0	Length dependence of Kvth0		0.0
Wkvth0	Width dependence of Kvth0		0.0
Pkvth0	Cross-term dependence of Kvth0		0.0
Stk2	K2 shift factor related to stress effect on Vth	m	0.0
Lodk2	K2 shift modification factor for stress effect		1.0
Steta0	Eta0 shift factor related to stress effect on Vth	m	0.0
Lodeta0	Eta0 shift modification factor for stress effect		1.0
Noia	Flicker noise parameter		6.25e41 (NMOS), 6.188e40 (PMOS)
Noib	Flicker noise parameter		3.125e26 (NMOS), 1.5e25 (PMOS)
Noic	Flicker noise parameter		8.75
Tnoia	Thermal noise parameter		1.5
Tnoib	Thermal noise parameter		3.5
Rnoia	Thermal noise coefficient		0.577
Rnoib	Thermal noise coefficient		0.37 (for version = 4.20, 4.21 or 4.30), 0.5164 (otherwise)
Ntnoi	Thermal noise parameter		1.0
Em	Flicker noise parameter	V/m	4.1e7
Ef	Flicker noise frequency exponent		1.0
Af	Flicker noise exponent		1.0
Kf	Flicker noise coefficient		0.0
wBvsub	substrate junction reverse breakdown voltage warning	V
wBvds	gate oxide breakdown voltage warning	V
wBvds	drain-source breakdown voltage warning	V
wIdsmax	maximum drain-source current warning	A
wPmax	maximum power dissipation warning	W
AllParams	DataAccessComponent (DAC)-based parameters

Netlist Format

Model statements for the ADS circuit simulator may be stored in an external file. This is typically done with foundry model kits. For more information on how to set up and use foundry model kits, refer to the

Design Kit Development

manual.

model modelname BSIM4 [parm=value]*

The model statement starts with the required keyword

model

. It is followed by the

modelname

that will be used by mosfet components to refer to the model. The third parameter indicates the type of model; for this model it is

BSIM4

. Use either parameter NMOS=yes or PMOS=yes to set the transistor type. The rest of the model contains pairs of model parameters and values, separated by an equal sign. The name of the model parameter must appear exactly as shown in the parameters table-these names are case sensitive. Some model parameters have aliases, which are listed in parentheses after the main parameter name; these are parameter names that can be used instead of the primary parameter name. Model parameters may appear in any order in the model statement. Model parameters that are not specified take the default value indicated in the parameters table. For more information about the ADS circuit simulator netlist format, including scale factors, subcircuits, variables and equations, refer to “ADS Simulator Input Syntax” in the

Using Circuit Simulators

manual.

Example:

model Nch7 BSIM4 \

Vtho=0.7 Cjs=3e-4 NMOS=yes

Notes/Equations

For RFDE Users

Information about this model must be provided in a

model

file; refer to

Netlist Format

.

BSIM4 was developed by the Device Research Group of the Department of Electrical Engineering and Computer Science, University of California, Berkeley and copyrighted by the University of California.
More information about this model is available at

http://www-device.eecs.berkeley.edu/%7ebsim3/
Several DC, AC, and capacitance parameters can be binned as described in the parameters table; these parameters follow this implementation:

For example, for the parameter K1, the following relationships exist: P
₀
=k1, P
_L
=lkl, P
_W
=wkl, P
_P
=pkl. The Binunit parameter is a binning unit selector. If Binunit=1, the units of L
_eff
and W
_eff
used in the preceding binning equation have units of microns, otherwise meters. For example, for a device with L
_eff
=0.5

m and W
_eff
=10

m, if Binunit=1, parameter values are le5, le4, 2e4, and 3e4 for Vsat, Lvsat, Wvsat, and Pvsat, respectively, Therefore, the effective value of Vsat for this device is:

Vsat = 1e5 + 1e4/0.5 + 2e4/10 + 3e4/(0.5

10) = 1.28e5

To get the same effective value of Vsat for Binunit=0, values of Vsat, Lvsat, Wvsat, and Pvsat would be 1e5, le

–

2, 2e

–

2, 3e

–

8, respectively. Thus:

Vsat = 1e5 + 1e-2/0.5e6 + 2e

–

2/10e

–

6 + 3e

–

8/(0.5e-6

10e

–

6) = 1.28e5

DC operating point data is generated for this model. If a DC simulation is performed, device operating point data can be viewed for a component. The procedure for viewing device operating point data for a component is in the

Using Circuit Simulators

manual. The device operating point information that is displayed for the BSIM4 model is:

Gm: small-signal Vgs to Ids transconductance, in Siemens

Gmb: small-signal Vbs to Ids transconductance, in Siemens

Gds: small-signal drain source conductance, in Siemens

Vth: threshold voltage, in volts

Vdsat: saturation voltage, in volts

DqgDvgb: small-signal transcapacitance dQg/dVg, in farads

DqgDvdb: small-signal transcapacitance dQg/dVd, in farads

DqgDvsb: small-signal transcapacitance dQg/dVs, in farads

DqbDvgb: small-signal transcapacitance dQb/dVg, in farads

DqbDvdb: small-signal transcapacitance dQb/dVd, in farads

DqbDvsb: small-signal transcapacitance dQb/dVs, in farads

DqdDvgb: small-signal transcapacitance dQd/dVg, in farads

DqdDvdb: small-signal transcapacitance dQd/dVd, in farads

DqdDvsb: small-signal transcapacitance dQd/dVs, in farads

If

₁
is not given, it is calculated by

₂
is not given, it is calculated by

If

NDEP

is not given and

₁
is given,

NDEP

is calculated from

If both

₁
and

NDEP

are not given,

NDEP

defaults to 1.7e17cm
^-3
and is calculated from

NDEP

If

VBX

is not given, it is calculated by
If

VTH

0 is not given it is calculated by

where

VFB

= -1.0

If

VTH

0 is given,

VFB

defaults to

If K
₁
and K
₂
are not given, they are calculated by
If

Cgso

is not given, it is calculated by:

If

DLC

is given and > 0.0

Cgso

=

DLC

C

_oxe
–

CGSL

if

Cgso

< 0.0,

CGSO

= 0.0

Else

CGSO

= 0.6

C

_oxe

If

CGDO

is not given, it is calculated by:

If

DLC

is given and > 0.0

CGDO

=

DLC

C

_oxe
–

CGDL

if

CGDO

< 0.0,

CGDO

= 0.0

Else

CGDO

= 0.6

C

_oxe

If

CGBO

is not given, it is calculated by:

CGBO

= 2

DWC

C

_oxe

If

CF

is not given, it is calculated by
For dioMod = 0, if Xjbvs < 0.0, it is reset to 1.0

For dioMod = 2, if Xjbvs

0.0, it is reset to 1.0

For dioMod = 0, if Xjbvd < 0.0, it is reset to 1.0

For dioMod = 2, if Xjbvd

0.0, it is reset to 1.0
Imelt, Ijth, Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev Parameters

Imelt, Ijth, Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev are used to determine the different diode limiting currents (also known as P-N junction explosion current).

Imelt can be specified in the device model or in the Options component; the device model value takes precedence over the Options value. Ijth can be specified only in the Options component.

If Ijthsfwd is not specified and Ijth is specified, Ijthsfwd = Ijth.

If Ijthsrev is not specified and Ijth is specified, Ijthsrev = Ijth.

If Ijthdfwd is not specified and Ijth is specified, Ijthdfwd = Ijth.

If Ijthdrev is not specified and Ijth is specified, Ijthdrev = Ijth.

If the Imelt value is less than the maximum value of Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev, the Imelt value is increased to the maximum value.

If Imelt is specified (in the model or in Options) all diode limiting currents (Ijthsfwd, Ijthsrev, Ijthdfwd, and Ijthdrev) = Imelt; otherwise, each diode limiting current is used to limit its own diode current.

Use AllParams with a DataAccessComponent to specify file-based parameters (refer to DataAccessComponent). Note that model parameters that are explicitly specified take precedence over those specified via AllParams. Set AllParams to the DataAccessComponent instance name.

BSIM4_Model (BSIM4 MOSFET Model)

Symbol

Available in ADS and RFDE

Parameters

Netlist Format

Notes/Equations

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